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www.irf.com 1 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a IRF7493PBF hexfet power mosfet notes through are on page 9 high frequency dc-dc converters lead-free benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current v dss r ds(on) max qg (typ .) 80v 15m @v gs =10v 35nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c maximum power dissipation w p d @t c = 70c maximum power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jc junction-to-lead ??? 20 r ja junction-to-ambient ??? 50 max. 9.3 7.4 74 20 80 -55 to + 150 2.5 0.02 1.6
IRF7493PBF 2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 80 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.074 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 11.5 15 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) gfs forward transconductance 13 ??? ??? s q g total gate charge ??? 35 53 q gs gate-to-source charge ??? 5.7 ??? q gd gate-to-drain charge ??? 12 ??? t d(on) turn-on delay time ??? 8.3 ??? t r rise time ??? 7.5 ??? t d(off) turn-off delay time ??? 30 ??? ns t f fall time ???12??? c iss input capacitance ??? 1510 ??? c oss output capacitance ??? 320 ??? pf c rss reverse transfer capacitance ??? 130 ??? c oss output capacitance ??? 1130 ??? c oss output capacitance ??? 210 ??? c rss eff. effective output capacitance ??? 320 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 9.3 (body diode) a i sm pulsed source current ??? ??? 74 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 37 56 ns q rr reverse recovery charge ??? 52 78 nc r g = 6.2 ? conditions v gs = 10v max. 180 5.6 v gs = 0v, v ds = 0v to 64v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 5.6a t j = 25c, i f = 5.6a, v dd = 15v di/dt = 100a/s t j = 25c, i s = 5.6a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? ??? v gs = 10v v gs = 0v v ds = 25v v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 64v, ? = 1.0mhz v dd = 40v, i d = 5.6a mosfet symbol v ds = v gs , i d = 250a v ds = 80v, v gs = 0v v ds = 64v, v gs = 0v, t j = 125c ? = 1.0mhz v ds = 15v, i d = 5.6a v ds = 40v v gs = 20v v gs = -20v i d = 5.6a
IRF7493PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 150c

3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 9.3a v gs = 10v
IRF7493PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v vds= 40v vds= 16v i d = 5.6a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRF7493PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 ! 0.1 %
+ - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response )
IRF7493PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 4.0 8.0 12.0 16.0 v gs, gate -to -source voltage (v) 0.010 0.020 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 5.6a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) "# # $# 0 20406080 i d , drain current (a) 0.011 0.012 0.013 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v
IRF7493PBF www.irf.com 7 fig 16.
for n-channel hexfet power mosfets %!& % '! ' ? & (!)'' ? ! '' ? & (&*+)'' %!!'!', !-! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? ./ '! 01 ? !.!-23 ? ) '! 0 !44 ? 35.3'! fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
IRF7493PBF 8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dimensions are shown in millimeters [inches]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code
IRF7493PBF www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 12mh r g = 25 ? , i as = 5.6a. pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04

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